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 FLL400IK-2C
High Voltage - High Power GaAs FET
FEATURES *E Output Power: P1dB=46.0dBm(Typ.) High *E Gain: G1dB=13.0dB(Typ.) High *E PAE: add=45%(Typ.) High *E Broad Band: 2.11~2.17GHz *E Hermetically Sealed Package DESCRIPTION The FLL400IK-2C is a 40 Watt GaAs FET that is specially suited for use in W-CDMA base station amplifier as long term reliability. Fujitsu's stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25oC) Item Symbol Rating
Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature VDS VGS PTot T stg Tch 15 -5 100 -65 to +175 175
Unit
V V W o C o C
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25oC) Item Symbol Condition Limit
DC Input Voltage Forward Gate Current Reverse Gate Current Operating channel temperature VDS IGF IGR Tch RG=5 RG=5 12 <85 >-25 145
Unit
V mA mA
o
C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC) Limit Item Symbol Condition Min. Typ. Max.
Pinch-off Voltage
Gate-Source Breakdown Voltage
Unit V V
dBm dB A
o
Vp VGSO P1dB G1dB Idsr add Rth
VDS=5V,IDS=110mA IGS=-1.1mA VDD=12V f=2.17GHz IDS(DC)=1.5A Pin=35dBm
-0.1 -5.0 45.0 12.0 -
-0.3 46.0 13.0 6.7 45.0 1.3
-0.5 8.7 1.5
Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-added Efficiency Thermal Resistance
% C/W
CASE STYLE: IK
ESD
Edition 1.2 September 2004
Class III
2000 V~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k)
1
FLL400IK-2C
High Voltage - High Power GaAs FET
Package Out Line
PIN ASSIGMENT 1 : GATE 2 : SOURCE(Flange) 3 : DRAIN Unit:mm
2
FLL400IK-2C
High Voltage - High Power GaAs FET
For further information please contact :
Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures:
*E not put these products into the mouth. Do
Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888
*E not alter the form of this product into a gas, powder, or liquid Do through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. *E Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.
Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101,Ocean Centre, 5 Canton Road, Tsim Sha Tsui Kowloon, Hong kong Tel: +852-2377-0227 Fax: +852-2377-3921
Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho, Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) Tel +81-55-275-4411 Fax +81-55-275-9461
Sales Division 1,Kanai-cho,Sakae-ku,Yokohama,244-0845,Japan
Tel +81-45-853-8156 Fax +81-45-853-8170
3


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